Invention Grant
- Patent Title: Operation method of non-volatile memory
- Patent Title (中): 非易失性存储器的操作方法
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Application No.: US12457464Application Date: 2009-06-11
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Publication No.: US08234438B2Publication Date: 2012-07-31
- Inventor: Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
- Applicant: Seungeon Ahn , Keewon Kwon , Jaechul Park , Youngsoo Park , Myoungjae Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0097786 20081006
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.
Public/Granted literature
- US20100085821A1 Operation method of non-volatile memory Public/Granted day:2010-04-08
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