Invention Grant
- Patent Title: Correction of errors in a memory array
- Patent Title (中): 更正存储器阵列中的错误
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Application No.: US11951455Application Date: 2007-12-06
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Publication No.: US08234539B2Publication Date: 2012-07-31
- Inventor: Eran Erez
- Applicant: Eran Erez
- Applicant Address: IL Kfar Saba
- Assignee: SanDisk IL Ltd.
- Current Assignee: SanDisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Martine Penilla Group LLP
- Main IPC: H03M13/00
- IPC: H03M13/00

Abstract:
A computer system for correction of errors in a memory array includes an error correction algorithm and a memory. The error correction algorithm is capable of correcting errors up to a first bit error rate in a correctable group of memory cells having a standard size. The memory is operative to store a first set of ECC bits having information corresponding to a first group of memory cells having a first size larger than the standard size, and to store a second set of ECC bits having information corresponding to a second group of memory cells having a second size smaller than said first size and being a portion of said first group. The error correction algorithm is operative to correct errors in the second group based on the second set of ECC bits if a failure occurs in correction of the first group based on the first set of ECC bits.
Public/Granted literature
- US20090150747A1 CORRECTION OF ERRORS IN A MEMORY ARRAY Public/Granted day:2009-06-11
Information query
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