Invention Grant
US08236103B2 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
有权
III族氮化物半导体晶体，其制造方法和III族氮化物半导体外延片
- Patent Title: Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
- Patent Title (中): III族氮化物半导体晶体，其制造方法和III族氮化物半导体外延片
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Application No.: US10504584Application Date: 2003-02-14
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Publication No.: US08236103B2Publication Date: 2012-08-07
- Inventor: Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
- Applicant: Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2002-38841 20020215
- International Application: PCT/JP03/01558 WO 20030214
- International Announcement: WO03/068699 WO 20030821
- Main IPC: C30B23/00
- IPC: C30B23/00
Abstract:
A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.
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