Invention Grant
- Patent Title: Method for low-K dielectric etch with reduced damage
- Patent Title (中): 低K电介质蚀刻方法，减少损伤
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Application No.: US12756086Application Date: 2010-04-07
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Publication No.: US08236188B2Publication Date: 2012-08-07
- Inventor: Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
- Applicant: Bing Ji , Kenji Takeshita , Andrew D. Bailey, III , Eric A. Hudson , Maryam Moravej , Stephen M. Sirard , Jungmin Ko , Daniel Le , Robert C. Hefty , Yu Cheng , Gerardo A. Delgadino , Bi-Ming Yen
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
Public/Granted literature
- US20100261352A1 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE Public/Granted day:2010-10-14
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