Invention Grant
US08236267B2 High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
有权
用于生长III族氮化物晶体的高压容器和使用高压容器和III族氮化物晶体生长III族氮化物晶体的方法
- Patent Title: High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
- Patent Title (中): 用于生长III族氮化物晶体的高压容器和使用高压容器和III族氮化物晶体生长III族氮化物晶体的方法
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Application No.: US12455683Application Date: 2009-06-04
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Publication No.: US08236267B2Publication Date: 2012-08-07
- Inventor: Tadao Hashimoto , Edward Letts , Masanori Ikari
- Applicant: Tadao Hashimoto , Edward Letts , Masanori Ikari
- Applicant Address: US CA Buellton
- Assignee: Sixpoint Materials, Inc.
- Current Assignee: Sixpoint Materials, Inc.
- Current Assignee Address: US CA Buellton
- Agency: K&L Gates, LLP
- Main IPC: C01B21/06
- IPC: C01B21/06 ; C30B23/00 ; C23C16/00

Abstract:
The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Also, back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
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