Invention Grant
- Patent Title: Method for fabricating a mask
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Application No.: US13071443Application Date: 2011-03-24
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Publication No.: US08236464B1Publication Date: 2012-08-07
- Inventor: Tah-Te Shih
- Applicant: Tah-Te Shih
- Applicant Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Assignee: Inotera Memories, Inc.
- Current Assignee: Inotera Memories, Inc.
- Current Assignee Address: TW Hwa-Ya Technology Park Kueishan, Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW100101217 20110113
- Main IPC: G03F1/20
- IPC: G03F1/20
Abstract:
A method for making a mask, in which, an imprinting lithography process is employed to form a pattern in a first region of a mask substrate, and an E-beam writing process is employed to form another pattern in a second region of the mask substrate. Furthermore, these two patterns may be well stitched through an optical alignment process in an E-beam writing chamber.
Public/Granted literature
- US20120183890A1 Method for fabricating a mask Public/Granted day:2012-07-19
Information query
