Invention Grant
- Patent Title: Single layer resist liftoff process for nano track width
- Patent Title (中): 纳米轨道宽度的单层抗剥离工艺
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Application No.: US10714305Application Date: 2003-11-14
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Publication No.: US08236484B2Publication Date: 2012-08-07
- Inventor: Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
- Applicant: Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G03F7/40
- IPC: G03F7/40
Abstract:
As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
Public/Granted literature
- US20050106509A1 Single layer resist liftoff process for nano track width Public/Granted day:2005-05-19
Information query
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