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US08236592B2 Method of forming semiconductor device 有权
半导体器件形成方法

Method of forming semiconductor device
Abstract:
A method for forming a semiconductor device is provided including processing a wafer having a target material; forming a first pattern over the target material; forming a protection layer over the first pattern; and forming a second pattern, over the target material and not over the protection layer, without an etching step between the forming the first pattern and the forming the second pattern.
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