Invention Grant
- Patent Title: Method of forming semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US11623031Application Date: 2007-01-12
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Publication No.: US08236592B2Publication Date: 2012-08-07
- Inventor: Ryoung-han Kim , Thomas Ingolf Wallow , Harry Jay Levinson , Jongwook Kye , Alden R. Acheta
- Applicant: Ryoung-han Kim , Thomas Ingolf Wallow , Harry Jay Levinson , Jongwook Kye , Alden R. Acheta
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for forming a semiconductor device is provided including processing a wafer having a target material; forming a first pattern over the target material; forming a protection layer over the first pattern; and forming a second pattern, over the target material and not over the protection layer, without an etching step between the forming the first pattern and the forming the second pattern.
Public/Granted literature
- US20080171446A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2008-07-17
Information query
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