Semiconductor-on-diamond devices and associated methods

Invention Grant

US08236594B2 Semiconductor-on-diamond devices and associated methods 有权

Title translation: 金刚石半导体器件及相关方法

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Patent Title: Semiconductor-on-diamond devices and associated methods
Patent Title (中): 金刚石半导体器件及相关方法
Application No.: US11584258

Application Date: 2006-10-20
Publication No.: US08236594B2

Publication Date: 2012-08-07
Inventor: Chien-Min Sung
Applicant: Chien-Min Sung
Agency: Thorpe North & Western LLP
Main IPC: H01L21/20
IPC: H01L21/20

Semiconductor-on-diamond devices and associated methods

Abstract:

Semiconductor-on-diamond devices and methods for making such devices are provided. One such method may include depositing a semiconductor layer on a semiconductor substrate, depositing an adynamic diamond layer on the semiconductor layer opposite the semiconductor substrate, and coupling a support substrate to the adynamic diamond layer opposite the semiconductor layer to support the adynamic layer.

Abstract(Chinese):

提供了金刚石半导体器件及其制造方法。一种这样的方法可以包括在半导体衬底上沉积半导体层，在与半导体衬底相对的半导体层上沉积动态金刚石层，以及将支撑衬底耦合到与半导体层相对的动力金刚石层以支撑动力学层。

Public/Granted literature

US20080096309A1 Semiconductor-on-diamond devices and associated methods Public/Granted day:2008-04-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长