Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13081174Application Date: 2011-04-06
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Publication No.: US08236620B2Publication Date: 2012-08-07
- Inventor: Naoto Kimura
- Applicant: Naoto Kimura
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-065277 20070314
- Main IPC: H01L21/60
- IPC: H01L21/60

Abstract:
To solve a problem in that a die processing cost increases when employing a method involving providing a suction hole in the die to fix an island onto a bottom surface, provided is a semiconductor device, which includes: a semiconductor chip, an island having a first surface, on which the semiconductor chip is mounted, and a second surface opposing to the first surface, a hanger pin extended from the island, a branch portion extended from one of the island and the hanger pin, and a resin encapsulating the semiconductor chip, the island, the hanger pin and the brunch portion while exposing the second surface of the island.
Public/Granted literature
- US20110183473A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-07-28
Information query
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