Invention Grant
- Patent Title: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
- Patent Title (中): 采用选择性制造的碳纳米管可逆电阻切换元件的记忆单元及其形成方法
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Application No.: US11968154Application Date: 2007-12-31
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Publication No.: US08236623B2Publication Date: 2012-08-07
- Inventor: April Schricker , Mark Clark , Brad Herner
- Applicant: April Schricker , Mark Clark , Brad Herner
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L21/332
- IPC: H01L21/332
Abstract:
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.
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