Method of manufacturing semiconductor device including ferroelectric capacitor

Invention Grant

US08236643B2 Method of manufacturing semiconductor device including ferroelectric capacitor 有权

Title translation: 包括铁电电容器的半导体器件的制造方法

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Patent Title: Method of manufacturing semiconductor device including ferroelectric capacitor
Patent Title (中): 包括铁电电容器的半导体器件的制造方法
Application No.: US12978872

Application Date: 2010-12-27
Publication No.: US08236643B2

Publication Date: 2012-08-07
Inventor: Wensheng Wang
Applicant: Wensheng Wang
Applicant Address: JP Yokohama
Assignee: Fujitsu Semiconductor Limited
Current Assignee: Fujitsu Semiconductor Limited
Current Assignee Address: JP Yokohama
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2006-218924 20060810
Main IPC: H01L21/8242
IPC: H01L21/8242

Method of manufacturing semiconductor device including ferroelectric capacitor

Abstract:

A method of manufacturing a semiconductor device with a ferroelectric capacitor, including, forming a lower insulating film on a semiconductor substrate, covering a MOS transistor, forming a lower electrode on the lower insulating film, forming a ferroelectric dielectric oxide film on the lower electrode, forming a first upper electrode on the dielectric oxide film, made of conductive oxide having a composition poor in oxygen, forming a second upper electrode on the first upper electrode, made of conductive oxide having a composition nearer to the stoichiometry, forming a third upper electrode on the second upper electrode, having a composition containing metal of the platinum group, constituting a ferroelectric capacitor, and forming a multilayer wiring structure above the lower interlevel insulating film, covering the ferroelectric capacitor, wherein the third upper electrode has a less oxygen composition than the first and second upper electrodes.

Abstract(Chinese):

一种制造具有铁电电容器的半导体器件的方法，包括在半导体衬底上形成下绝缘膜，覆盖MOS晶体管，在下绝缘膜上形成下电极，在下电极上形成铁电电介质氧化膜，在所述电介质氧化膜上形成第一上电极，所述第一上电极由具有不良氧组成的导电氧化物制成，在所述第一上电极上形成第二上电极，所述第二上电极由具有接近化学计量比的组成的导电氧化物制成，形成第三上电极在第二上部电极上具有含有铂族金属的组成物，构成强电介质电容器，并且在下部层间绝缘膜的上方形成覆盖铁电体电容器的多层布线结构，其中第三上部电极的氧组成比第一和第二上电极。

Public/Granted literature

US20110091998A1 SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR Public/Granted day:2011-04-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）