Invention Grant
- Patent Title: Semiconductor device with buried bit lines and method for fabricating the same
- Patent Title (中): 具有掩埋位线的半导体器件及其制造方法
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Application No.: US12841742Application Date: 2010-07-22
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Publication No.: US08236652B2Publication Date: 2012-08-07
- Inventor: Su-Young Kim
- Applicant: Su-Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0117433 20091130; KR10-2010-0051196 20100531
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.
Public/Granted literature
- US20110127605A1 SEMICONDUCTOR DEVICE WITH BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-06-02
Information query
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