Invention Grant
- Patent Title: Substrate processing method and semiconductor device manufacturing method including a proton injection step and a laser irradiation step
- Patent Title (中): 基板处理方法和包括质子注入步骤和激光照射步骤的半导体器件制造方法
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Application No.: US12926026Application Date: 2010-10-21
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Publication No.: US08236674B2Publication Date: 2012-08-07
- Inventor: Shintaro Ishiyama
- Applicant: Shintaro Ishiyama
- Applicant Address: JP Ibaraki
- Assignee: Japan Atomic Energy Agency
- Current Assignee: Japan Atomic Energy Agency
- Current Assignee Address: JP Ibaraki
- Agency: Edwards Neils PLLC
- Agent Paul F. Neils, Esq.
- Priority: JP2009-244603 20091023
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/44 ; H01L21/26
Abstract:
A substrate micro-processing method and a semiconductor device manufacturing method in which a stained part does not remain in a finished product even if a residual ion-injected part stays in the finished product. The substrate micro-processing method is one that carries out processing of a substrate by dividing the substrate depthwise, and comprises a proton injection step S11 in which protons are injected from one principal surface side of the substrate and an irradiation step S12 in which the substrate is irradiated with light having the wavelength nearly equal to the absorption wavelength of the defect level formed within the substrate due to the proton injection in order to divide the substrate.
Public/Granted literature
- US20110130013A1 Substrate processing method and semiconductor device manufacturing method Public/Granted day:2011-06-02
Information query
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