Invention Grant
- Patent Title: Method of passivating chemical mechanical polishing compositions for copper film planarization processes
- Patent Title (中): 钝化铜膜平面化工艺的化学机械抛光组合物的方法
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Application No.: US12234199Application Date: 2008-09-19
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Publication No.: US08236695B2Publication Date: 2012-08-07
- Inventor: Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
- Applicant: Jun Liu , Mackenzie King , Michael S. Darsillo , Karl E. Boggs , Jeffrey F. Roeder , Peter Wrschka , Thomas H. Baum
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Moore & Van Allen, PLLC
- Agent Tristan A. Fuierer; Rosa Yaghmour
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B44C1/22
Abstract:
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
Public/Granted literature
- US20090137122A1 METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES Public/Granted day:2009-05-28
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