Invention Grant
US08237145B2 Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
有权
具有记录层的非易失性存储器件具有两个不同氮量的部分
- Patent Title: Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
- Patent Title (中): 具有记录层的非易失性存储器件具有两个不同氮量的部分
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Application No.: US12858975Application Date: 2010-08-18
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Publication No.: US08237145B2Publication Date: 2012-08-07
- Inventor: Chikayoshi Kamata , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
- Applicant: Chikayoshi Kamata , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L23/58
Abstract:
According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
Public/Granted literature
- US20110024713A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-02-03
Information query
IPC分类:
