Invention Grant
- Patent Title: Switching element and manufacturing method thereof
- Patent Title (中): 开关元件及其制造方法
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Application No.: US12738718Application Date: 2008-10-14
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Publication No.: US08237147B2Publication Date: 2012-08-07
- Inventor: Toshitsugu Sakamoto
- Applicant: Toshitsugu Sakamoto
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agent Michael Dryja
- Priority: JP2007-272699 20071019
- International Application: PCT/JP2008/068581 WO 20081014
- International Announcement: WO2009/051105 WO 20090423
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/332 ; G11C11/00

Abstract:
A switching element according to the present invention includes an ion-conducting layer, first electrode 11 and second electrode 12 placed in contact with the ion-conducting layer, and third electrode 15 placed in contact with the ion-conducting layer and to control electrical conductivity between the first electrode and the second electrode, wherein the shortest distance between any two of first, second, and third electrodes 11, 12, and 13 is defined by the film thickness of the ion-conducting layer.
Public/Granted literature
- US20100207091A1 SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-08-19
Information query
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