Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower part of the bottom electrode. A nitride spacer is disposed on a top surface of the conductive spacer and a sidewall of the upper part of the bottom electrode. A resistance changeable element is disposed on the upper part of the bottom electrode and the nitride spacer. The upper part of the bottom electrode contains nitrogen (N).