Invention Grant
- Patent Title: Diode-based devices and methods for making the same
- Patent Title (中): 基于二极管的器件及其制造方法
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Application No.: US12684797Application Date: 2010-01-08
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Publication No.: US08237151B2Publication Date: 2012-08-07
- Inventor: Anthony J. Lochtefeld
- Applicant: Anthony J. Lochtefeld
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
Public/Granted literature
- US20100176375A1 Diode-Based Devices and Methods for Making the Same Public/Granted day:2010-07-15
Information query
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