Invention Grant
- Patent Title: Selective nanotube formation and related devices
- Patent Title (中): 选择性纳米管形成及相关器件
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Application No.: US12492829Application Date: 2009-06-26
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Publication No.: US08237155B2Publication Date: 2012-08-07
- Inventor: Zhenan Bao , Melburne Lemieux , Justin P. Opatkiewicz , Soumendra N. Barman
- Applicant: Zhenan Bao , Melburne Lemieux , Justin P. Opatkiewicz , Soumendra N. Barman
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Crawford Maunu PLLC
- Main IPC: H01L35/24
- IPC: H01L35/24

Abstract:
Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.
Public/Granted literature
- US20100001255A1 SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES Public/Granted day:2010-01-07
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