Invention Grant
US08237161B2 Amorphous boron carbide films for p-n junctions and method for fabricating same
失效
用于p-n结的无定形碳化硼薄膜及其制造方法
- Patent Title: Amorphous boron carbide films for p-n junctions and method for fabricating same
- Patent Title (中): 用于p-n结的无定形碳化硼薄膜及其制造方法
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Application No.: US12853857Application Date: 2010-08-10
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Publication No.: US08237161B2Publication Date: 2012-08-07
- Inventor: Anthony N. Caruso , Joseph A. Sandstrom , David A. Bunzow
- Applicant: Anthony N. Caruso , Joseph A. Sandstrom , David A. Bunzow
- Applicant Address: US ND Fargo
- Assignee: North Dakota State University Research Foundation
- Current Assignee: North Dakota State University Research Foundation
- Current Assignee Address: US ND Fargo
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.
Public/Granted literature
- US20120037904A1 AMORPHOUS BORON CARBIDE FILMS FOR P-N JUNCTIONS AND METHOD FOR FABRICATING SAME Public/Granted day:2012-02-16
Information query
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