Invention Grant
- Patent Title: Fully silicon ALED-photodiode optical data link module
- Patent Title (中): 全硅ALED光电二极管光数据链路模块
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Application No.: US12804069Application Date: 2010-07-12
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Publication No.: US08237177B2Publication Date: 2012-08-07
- Inventor: Vladislav Vashchenko
- Applicant: Vladislav Vashchenko
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
In a silicon-based light emitting diode-photodiode (LED-PD) arrangement, the LED is implemented as an avalanche LED (ALED) and the ALED and PD are integrated into a common integrated circuit. The ALED is formed around a cross-shaped PD and is separated from the PD by a deep trench region. In order to create current crowding close to the deep trench the ALED includes an NBL or PBL having a narrowing at its end.
Public/Granted literature
- US20120007105A1 Fully silicon aled-photodiode optical data link module Public/Granted day:2012-01-12
Information query
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