Invention Grant
US08237185B2 Semiconductor light emitting device with integrated ESD protection
有权
具有集成ESD保护的半导体发光器件
- Patent Title: Semiconductor light emitting device with integrated ESD protection
- Patent Title (中): 具有集成ESD保护的半导体发光器件
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Application No.: US12447118Application Date: 2008-12-24
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Publication No.: US08237185B2Publication Date: 2012-08-07
- Inventor: Hyung Jo Park
- Applicant: Hyung Jo Park
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0000841 20080103
- International Application: PCT/KR2008/007666 WO 20081224
- International Announcement: WO2009/084860 WO 20090709
- Main IPC: H01L33/38
- IPC: H01L33/38

Abstract:
Embodiments provide a semiconductor light emitting device which comprises a light emitting structure comprising a plurality of compound semiconductor layers, an insulation layer on an outer surface of the light emitting structure, an ohmic layer under the light emitting structure and on an outer surface of the insulation layer, a first electrode layer on the light emitting structure, and a tunnel barrier layer between the first electrode layer and the ohmic layer.
Public/Granted literature
- US20110001145A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-01-06
Information query
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