Invention Grant
- Patent Title: Lateral transient voltage suppressor for low-voltage applications
- Patent Title (中): 用于低压应用的侧向瞬态电压抑制器
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Application No.: US12837128Application Date: 2010-07-15
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Publication No.: US08237193B2Publication Date: 2012-08-07
- Inventor: Che-Hao Chuang , Kun-Hsien Lin , Ryan Hsin-Chin Jiang
- Applicant: Che-Hao Chuang , Kun-Hsien Lin , Ryan Hsin-Chin Jiang
- Applicant Address: TW Taipei County
- Assignee: Amazing Microelectronic Corp.
- Current Assignee: Amazing Microelectronic Corp.
- Current Assignee Address: TW Taipei County
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A lateral transient voltage suppressor for low-voltage applications. The suppressor includes an N-type heavily doped substrate and at least two clamp diode structures horizontally arranged in the N-type heavily doped substrate. Each clamp diode structure further includes a clamp well arranged in the N-type heavily doped substrate and having a first heavily doped area and a second heavily doped area. The first and second heavily doped areas respectively belong to opposite conductivity types. There is a plurality of deep isolation trenches arranged in the N-type heavily doped substrate and having a depth greater than depth of the clamp well. The deep isolation trenches can separate each clamp well. The present invention avoids the huge leakage current to be suitable for low-voltage application.
Public/Granted literature
- US20120012974A1 LATERAL TRANSIENT VOLTAGE SUPPRESSOR FOR LOW-VOLTAGE APPLICATIONS Public/Granted day:2012-01-19
Information query
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