Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US13214271Application Date: 2011-08-22
-
Publication No.: US08237221B2Publication Date: 2012-08-07
- Inventor: Ryotaro Yagi , Isamu Nishimura , Takahisa Yamaha
- Applicant: Ryotaro Yagi , Isamu Nishimura , Takahisa Yamaha
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-313689 20071204; JP2007-329116 20071220; JP2007-332681 20071225
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L29/78 ; H01L21/28 ; H01L21/336
Abstract:
The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.
Public/Granted literature
- US20110298044A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-12-08
Information query
IPC分类:
