Invention Grant
US08237244B2 Semiconductor device including a transistor and a capacitor having multiple insulating films
有权
包括晶体管和具有多个绝缘膜的电容器的半导体器件
- Patent Title: Semiconductor device including a transistor and a capacitor having multiple insulating films
- Patent Title (中): 包括晶体管和具有多个绝缘膜的电容器的半导体器件
-
Application No.: US12907059Application Date: 2010-10-19
-
Publication No.: US08237244B2Publication Date: 2012-08-07
- Inventor: Masahiro Totsuka
- Applicant: Masahiro Totsuka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2008-301313 20081126
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff.
Public/Granted literature
- US20110031587A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-02-10
Information query
IPC分类:
