Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12468284Application Date: 2009-05-19
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Publication No.: US08237248B2Publication Date: 2012-08-07
- Inventor: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- Applicant: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-136066 20080523
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.
Public/Granted literature
- US20090289341A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-11-26
Information query
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