Invention Grant
US08237251B2 Semiconductor device including semiconductor chips with different thickness
有权
包括具有不同厚度的半导体芯片的半导体器件
- Patent Title: Semiconductor device including semiconductor chips with different thickness
- Patent Title (中): 包括具有不同厚度的半导体芯片的半导体器件
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Application No.: US12357895Application Date: 2009-01-22
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Publication No.: US08237251B2Publication Date: 2012-08-07
- Inventor: Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
- Applicant: Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-012816 20080123
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/485 ; H01L25/10
Abstract:
In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
Public/Granted literature
- US20090184409A1 SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CHIPS WITH DIFFERENT THICKNESS Public/Granted day:2009-07-23
Information query
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