Invention Grant
- Patent Title: Distributed semiconductor device methods, apparatus, and systems
- Patent Title (中): 分布式半导体器件的方法，装置和系统
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Application No.: US13112863Application Date: 2011-05-20
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Publication No.: US08237254B2Publication Date: 2012-08-07
- Inventor: Paul A. Farrar , Hussein I Hanafi
- Applicant: Paul A. Farrar , Hussein I Hanafi
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L23/22
- IPC: H01L23/22 ; H01L23/24
Abstract:
Some embodiments include a device having a number of memory cells and associated circuitry for accessing the memory cells. The memory cells of the device may be formed in one or more memory cell dice. The associated circuitry of the device may also be formed in one or more dice, optionally separated from the memory cell dice.
Public/Granted literature
- US20110222328A1 DISTRIBUTED SEMICONDUCTOR DEVICE METHODS, APPARATUS, AND SYSTEMS Public/Granted day:2011-09-15
Information query
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