Invention Grant
- Patent Title: Power semiconductor module with segmented base plate
- Patent Title (中): 功率半导体模块具有分段基板
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Application No.: US12324401Application Date: 2008-11-26
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Publication No.: US08237260B2Publication Date: 2012-08-07
- Inventor: Roman Tschirbs
- Applicant: Roman Tschirbs
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/12

Abstract:
A power semiconductor module with segmented base plate. One embodiment provides a semiconductor module including a base plate and at least two circuit carriers. The base plate includes at least two base plate segments spaced distant from one another. Each of the circuit carriers includes a ceramic substrate provided with at least a first metallization layer. Each of the circuit carriers is arranged on exactly one of the base plate segments. At least two of the circuit carriers are spaced distant from one another.
Public/Granted literature
- US20100127371A1 POWER SEMICONDUCTOR MODULE WITH SEGMENTED BASE PLATE Public/Granted day:2010-05-27
Information query
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