Invention Grant
- Patent Title: Method of manufacturing semiconductor device and thermal annealing apparatus
- Patent Title (中): 制造半导体器件和热退火设备的方法
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Application No.: US13009904Application Date: 2011-01-20
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Publication No.: US08237264B2Publication Date: 2012-08-07
- Inventor: Kouichi Nagai
- Applicant: Kouichi Nagai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2008-004602 20080111
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed.
Public/Granted literature
- US20110108542A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THERMAL ANNEALING APPARATUS Public/Granted day:2011-05-12
Information query
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