A semiconductor component formed on a semiconductor substrate is provided. The semiconductor substrate has a first surface and a second surface. The semiconductor substrate includes a plurality of devices on the first surface. A plurality of through silicon vias (TSVs) in the semiconductor substrate extends from the first surface to the second surface. A protection layer overlies the devices on the first surface of the semiconductor substrate. A plurality of active conductive pillars on the protection layer have a first height. Each of the active conductive pillars is electrically connected to at least one of the plurality of devices. A plurality of dummy conductive pillars on the protection layer have a second height. Each of the dummy conductive pillars is electrically isolated from the plurality of devices. The first height and the second height are substantially equal.