Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12929968Application Date: 2011-02-28
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Publication No.: US08237287B2Publication Date: 2012-08-07
- Inventor: Yuji Tada , Tsuyoshi Hirakawa , Hironori Nakamura , Takayuki Kurokawa
- Applicant: Yuji Tada , Tsuyoshi Hirakawa , Hironori Nakamura , Takayuki Kurokawa
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Law Group, PLLC
- Priority: JP2010-080938 20100331
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
A semiconductor device includes a substrate over which a circuit is formed, a multi-layer wiring layer having a plurality of wiring layers formed over the substrate and a pad formed in a predetermined location of an uppermost layer of the wiring layers, a new pad provided in an appropriate location over the multi-layer wiring layer, and a redistribution layer provided with a redistribution line coupling the new pad and the pad. In the semiconductor device: the multi-layer wiring layer includes a signal line for transmitting an electric signal to the circuit and a ground line provided in a wiring layer between the redistribution line or the new pad and the circuit; the ground line is formed to correspond to a location where the new pad is assumed to be located and a route along which the redistribution line is assumed to be formed; and the redistribution line is formed along at least a portion of the ground line.
Public/Granted literature
- US20110241216A1 Semiconductor device Public/Granted day:2011-10-06
Information query
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