Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12526236Application Date: 2008-02-29
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Publication No.: US08237292B2Publication Date: 2012-08-07
- Inventor: Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
- Applicant: Akinobu Shibuya , Koichi Takemura , Akira Ouchi , Tomoo Murakami
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-052103 20070301
- International Application: PCT/JP2008/053651 WO 20080229
- International Announcement: WO2008/105535 WO 20080904
- Main IPC: H01L23/488
- IPC: H01L23/488

Abstract:
A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.
Public/Granted literature
- US20100308474A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-12-09
Information query
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