Invention Grant
- Patent Title: Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus for semiconductor device
- Patent Title (中): 半导体装置，半导体装置的制造方法以及半导体装置的制造装置
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Application No.: US13052368Application Date: 2011-03-21
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Publication No.: US08237295B2Publication Date: 2012-08-07
- Inventor: Yuichi Sano , Takashi Imoto , Naoto Takebe , Katsuhiro Ishida , Tomomi Honda , Yasushi Kumagai
- Applicant: Yuichi Sano , Takashi Imoto , Naoto Takebe , Katsuhiro Ishida , Tomomi Honda , Yasushi Kumagai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-139998 20100618
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/40
Abstract:
According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.
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