Invention Grant
US08237361B2 Display device with protective film having a low density silicon nitride film between high density silicon nitride films
失效
具有在高密度氮化硅膜之间具有低密度氮化硅膜的保护膜的显示装置
- Patent Title: Display device with protective film having a low density silicon nitride film between high density silicon nitride films
- Patent Title (中): 具有在高密度氮化硅膜之间具有低密度氮化硅膜的保护膜的显示装置
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Application No.: US12096487Application Date: 2006-12-07
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Publication No.: US08237361B2Publication Date: 2012-08-07
- Inventor: Toshiaki Imai , Kaoru Abe , Shinji Kubota , Shinichiro Morikawa , Teiichiro Nishimura
- Applicant: Toshiaki Imai , Kaoru Abe , Shinji Kubota , Shinichiro Morikawa , Teiichiro Nishimura
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2005-352887 20051207; JP2006-322104 20061129
- International Application: PCT/JP2006/324448 WO 20061207
- International Announcement: WO2007/066719 WO 20070614
- Main IPC: H01L51/00
- IPC: H01L51/00

Abstract:
There is provided a display capable of protecting a light-emitting device by a protective film having good sealing characteristics and sidewall step coverage and preventing deterioration of the light-emitting device, thereby maintaining good display characteristics. A display device 1 including an organic electroluminescence device 3 provided on a substrate 2 and protected by a protective film 4 is characterized in that the protective film 4 is composed of silicon nitride films 4a, 4b, and 4c formed in layers by a chemical vapor deposition method using an ammonia gas, the high-density silicon nitride film 4c is provided in a surface layer of the protective film 4, and the low-density silicon nitride film 4b having a lower density than that of the high-density silicon nitride film 4c is provided below it.
Public/Granted literature
- US20090309486A1 DISPLAY Public/Granted day:2009-12-17
Information query
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