Invention Grant
- Patent Title: Semiconductor device and method of controlling the same
- Patent Title (中): 半导体装置及其控制方法
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Application No.: US12871529Application Date: 2010-08-30
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Publication No.: US08237469B2Publication Date: 2012-08-07
- Inventor: Toshio Yamada , Kazuo Tanaka , Akinobu Watanabe , Shigeru Yamamoto , Yukio Hiraiwa
- Applicant: Toshio Yamada , Kazuo Tanaka , Akinobu Watanabe , Shigeru Yamamoto , Yukio Hiraiwa
- Applicant Address: JP kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP kanagawa
- Agency: Womble Carlyle
- Priority: JP2009-211910 20090914
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A pull-up circuit prevents generation of a leak current if a difference of potentials occurs between a power source voltage of a pull-up circuit (a bus-hold circuit) and an input terminal. A control terminal is provided in the bus-hold circuit. Inputs of the input terminal and the control terminal are input to a NOR gate, and an output of the NOR gate is input to a gate terminal of a first MOSFET that controls coupling between an input terminal and the power source voltage of the bus-hold circuit. A second MOSFET (“control” MOSFET) is provided as a switch that operates by an inverted output of the control terminal. By coupling the first MOSFET and the control MOSFET in series, the coupling between the input terminal and the power source voltage is controlled with a higher precision, thereby preventing generation of a leak current.
Public/Granted literature
- US20110062990A1 Semiconductor Device and Method of Controlling the Same Public/Granted day:2011-03-17
Information query
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