Invention Grant
US08238135B2 MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region
有权
MRAM利用具有比开关区域更大的阻尼系数的固定磁化区域的自由层
- Patent Title: MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region
- Patent Title (中): MRAM利用具有比开关区域更大的阻尼系数的固定磁化区域的自由层
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Application No.: US12529387Application Date: 2008-01-15
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Publication No.: US08238135B2Publication Date: 2012-08-07
- Inventor: Tetsuhiro Suzuki , Norikazu Ohshima , Hideaki Numata
- Applicant: Tetsuhiro Suzuki , Norikazu Ohshima , Hideaki Numata
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-056693 20070307
- International Application: PCT/JP2008/050344 WO 20080115
- International Announcement: WO2008/108108 WO 20080912
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient α in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient α in the magnetization switching region 13.
Public/Granted literature
- US20100096715A1 MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2010-04-22
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