Invention Grant
US08238145B2 Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cell
有权
共享晶体管在自旋转矩传递磁随机存取存储器（STTMRAM）中
- Patent Title: Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cell
- Patent Title (中): 共享晶体管在自旋转矩传递磁随机存取存储器（STTMRAM）中
-
Application No.: US12756081Application Date: 2010-04-07
-
Publication No.: US08238145B2Publication Date: 2012-08-07
- Inventor: Ebrahim Abedifard
- Applicant: Ebrahim Abedifard
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A spin-torque transfer memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.
Public/Granted literature
- US20100259976A1 Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (STTMRAM) Cell Public/Granted day:2010-10-14
Information query
