Invention Grant
- Patent Title: Semiconductor memory apparatus
- Patent Title (中): 半导体存储装置
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Application No.: US12840253Application Date: 2010-07-20
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Publication No.: US08238180B2Publication Date: 2012-08-07
- Inventor: Jong Ho Jung
- Applicant: Jong Ho Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0040547 20100430
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory apparatus includes: a line calibration unit configured to selectively output one signal from the group of code signals for calibrating termination resistance values and test mode signals for testing a chip of the semiconductor memory apparatus to a common global line based on the level of a line calibration signal.
Public/Granted literature
- US20110267911A1 SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2011-11-03
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