Invention Grant
- Patent Title: Semiconductor memory device changing refresh interval depending on temperature
- Patent Title (中): 半导体存储器件根据温度改变刷新间隔
-
Application No.: US13026987Application Date: 2011-02-14
-
Publication No.: US08238188B2Publication Date: 2012-08-07
- Inventor: Akinobu Shirota , Kuninori Kawabata
- Applicant: Akinobu Shirota , Kuninori Kawabata
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.
Public/Granted literature
- US20110134714A1 SEMICONDUCTOR MEMORY DEVICE CHANGING REFRESH INTERVAL DEPENDING ON TEMPERATURE Public/Granted day:2011-06-09
Information query