Invention Grant
US08238398B2 Diode laser, integral diode laser, and an integral semiconductor optical amplifier
有权
二极管激光器,集成二极管激光器和集成半导体光放大器
- Patent Title: Diode laser, integral diode laser, and an integral semiconductor optical amplifier
- Patent Title (中): 二极管激光器,集成二极管激光器和集成半导体光放大器
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Application No.: US12996165Application Date: 2009-06-03
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Publication No.: US08238398B2Publication Date: 2012-08-07
- Inventor: Vasiliy Ivanovich Shveykin , Viktor Archilovich Gelovani , Aleksey Nikolaevich Sonk , Igor Petrovich Yarema
- Applicant: Vasiliy Ivanovich Shveykin , Viktor Archilovich Gelovani , Aleksey Nikolaevich Sonk , Igor Petrovich Yarema
- Applicant Address: CY Nicosia
- Assignee: General Nano Optics Limited
- Current Assignee: General Nano Optics Limited
- Current Assignee Address: CY Nicosia
- Agency: Haynes and Boone, LLP
- Agent Pavel I. Pogodin
- Priority: RU2008122549 20080606
- International Application: PCT/RU2009/000278 WO 20090603
- International Announcement: WO2009/148360 WO 20091210
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face. Invention makes it possible to design superpower, high-performance, high-speed and reliable three types of sources of single-frequency, single-mode and multi-mode high quality laser radiation in broad wavelength band, to simplify the production and cut in production costs thereof.
Public/Granted literature
- US20110150021A1 DIODE LASER, INTEGRAL DIODE LASER, AND AN INTEGRAL SEMICONDUCTOR OPTICAL AMPLIFIER Public/Granted day:2011-06-23
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