Invention Grant
US08239616B2 Semiconductor device comprising flash memory and address mapping method
失效
包括闪速存储器和地址映射方法的半导体器件
- Patent Title: Semiconductor device comprising flash memory and address mapping method
- Patent Title (中): 包括闪速存储器和地址映射方法的半导体器件
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Application No.: US12629268Application Date: 2009-12-02
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Publication No.: US08239616B2Publication Date: 2012-08-07
- Inventor: Han-bin Yoon , Young-goo Ko , Jung-been Im , Hwan-jin Yong , Chang-Hee Lee
- Applicant: Han-bin Yoon , Young-goo Ko , Jung-been Im , Hwan-jin Yong , Chang-Hee Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0122041 20081203
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A semiconductor device with flash memory includes; a log type determining unit configured to select log type from among a plurality of log types with respect to a log block storing program data requested to be programmed in the flash memory and generate a control signal indicating information indicating the selected log type, and a plurality of log units configured to store program data in the log block having a corresponding log type in response to the control signal, wherein the log type determining unit converts a first type log block formed by a first log type and included in a first type log unit from among the plurality of log units into second type log block formed by a second log type and converts the log block included in a second type log unit from among the plurality of log units into the first type log blocks, the first log type being different from the second log type.
Public/Granted literature
- US20100138595A1 SEMICONDUCTOR DEVICE COMPRISING FLASH MEMORY AND ADDRESS MAPPING METHOD Public/Granted day:2010-06-03
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