Invention Grant
- Patent Title: Systems and methods for power dissipation control in a semiconductor device
- Patent Title (中): 半导体器件功耗控制的系统和方法
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Application No.: US12425532Application Date: 2009-04-17
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Publication No.: US08239700B2Publication Date: 2012-08-07
- Inventor: George Nation , Jon W. Byrn , Gary Delp
- Applicant: George Nation , Jon W. Byrn , Gary Delp
- Applicant Address: US CA Milpitas
- Assignee: LSI Corporation
- Current Assignee: LSI Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Hamilton, DeSanctis & Cha
- Main IPC: G06F1/32
- IPC: G06F1/32

Abstract:
Various embodiments of the present invention provide systems and methods for governing power dissipation in a semiconductor device. For example, various embodiments of the present invention provide semiconductor devices that include a first function circuit, a second function circuit, and a power state change control circuit. The power state change control circuit is operable to determine a combination of power states of the first function circuit and the second function circuit that provides an overall power dissipation within a power dissipation level.
Public/Granted literature
- US20100264983A1 Systems and Methods for Power Dissipation Control in a Semiconductor Device Public/Granted day:2010-10-21
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