Invention Grant
US08241840B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
有权
图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
- Patent Title: Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
- Patent Title (中): 图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
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Application No.: US12825088Application Date: 2010-06-28
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Publication No.: US08241840B2Publication Date: 2012-08-14
- Inventor: Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
- Applicant: Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-105910 20070413; JP2007-197838 20070730
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/004
Abstract:
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
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