Invention Grant
- Patent Title: Method of forming MEMS device with weakened substrate
- Patent Title (中): 形成具有弱化衬底的MEMS器件的方法
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Application No.: US12899292Application Date: 2010-10-06
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Publication No.: US08241931B1Publication Date: 2012-08-14
- Inventor: Christophe Antoine , John R. Martin
- Applicant: Christophe Antoine , John R. Martin
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of producing a MEMS device provides a first substrate having a first interior surface and thickness, and a second substrate having a second interior surface. The method also forms at least one closed wall on at least one of the first and second substrates, weakens the first substrate in a plane generally parallel to the first interior surface, and secures the first substrate to the second substrate. The at least one closed wall extends between the first interior surface and the second interior surface. The method further separates a portion of the first substrate along the plane generally parallel to the first interior surface after securing the first and second substrates, and removes an excess portion of the first substrate to produce a reduced thickness first substrate of no greater than about 20 microns.
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