Invention Grant
- Patent Title: Tunneling magnetoresistance read sensor with dual sense layers
- Patent Title (中): 具有双重感应层的隧道式磁阻读取传感器
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Application No.: US12587155Application Date: 2009-10-02
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Publication No.: US08243401B2Publication Date: 2012-08-14
- Inventor: Tsann Lin
- Applicant: Tsann Lin
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Lorimer Labs
- Agent D'Arcy H. Lorimer
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
A tunneling magnetoresistance (TMR) read sensor with a Co—Fe—B lower sense layer and a Co—Hf upper sense layer is disclosed. In order for the dual sense layers to exhibit a negative saturation magnetostriction (λS), their Fe contents are either substantially reduced or even eliminated, instead of adding a conventional Ni—Fe film as an additional sense layer. By optimizing compositions and thicknesses of the dual sense layers, the dual sense layers indeed exhibit a negative λS, while the TMR sensor exhibits a TMR coefficient (ΔRT/RJ) of greater than 80% at a junction resistance-area product (RJAJ) of less than 2 Ω-μm2.
Public/Granted literature
- US20110081558A1 Tunneling magnetoresistance read sensor with dual sense layers Public/Granted day:2011-04-07
Information query
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