Invention Grant
- Patent Title: Method for making field emission device
- Patent Title (中): 场致发射装置的制作方法
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Application No.: US12959605Application Date: 2010-12-03
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Publication No.: US08246413B2Publication Date: 2012-08-21
- Inventor: Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
- Applicant: Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
- Applicant Address: CN Beijing TW Tu-Cheng, New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010178171 20100520
- Main IPC: H01J1/00
- IPC: H01J1/00

Abstract:
A method for making a field emission device includes the following steps. An insulative substrate is provided. An electron pulling electrode is formed on the insulative substrate. A secondary electron emission layer is formed on the electron pulling electrode. A first dielectric layer is fabricated. The first dielectric layer has a second opening to expose the secondary electron emission layer. A cathode plate having an electron output portion is provided. An electron emission layer is formed on part surface of the cathode plate. The cathode plate is placed on the first dielectric layer. The electron output portion and the second opening have at least one part overlapped, and at least one part of the electron emission layer is oriented to the secondary electron emission layer via the second opening.
Public/Granted literature
- US20110287684A1 METHOD FOR MAKING FIELD EMISSION DEVICE Public/Granted day:2011-11-24
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