Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12574995Application Date: 2009-10-07
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Publication No.: US08247844B2Publication Date: 2012-08-21
- Inventor: Toshiyuki Oishi , Yoshitsugu Yamamoto , Hiroshi Otsuka , Koji Yamanaka , Akira Inoue
- Applicant: Toshiyuki Oishi , Yoshitsugu Yamamoto , Hiroshi Otsuka , Koji Yamanaka , Akira Inoue
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-082480 20090330
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
Abstract:
An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer.
Public/Granted literature
- US20100244041A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-09-30
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