Invention Grant
- Patent Title: High-voltage-resistant rectifier with standard CMOS transistors
- Patent Title (中): 具有标准CMOS晶体管的高耐压整流器
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Application No.: US12570160Application Date: 2009-09-30
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Publication No.: US08254152B2Publication Date: 2012-08-28
- Inventor: Jianming Wang , Yusheng Cao , Junhua Mao , Xiangdong Wu
- Applicant: Jianming Wang , Yusheng Cao , Junhua Mao , Xiangdong Wu
- Applicant Address: CN Shanghai
- Assignee: Shanghai Kiloway Electronics Inc
- Current Assignee: Shanghai Kiloway Electronics Inc
- Current Assignee Address: CN Shanghai
- Agency: Sinorica, LLC
- Agent Ming Chow
- Priority: WOPCT/CN2007/001057 20070402
- Main IPC: H02M7/217
- IPC: H02M7/217

Abstract:
A high-voltage-resistant rectifier with standard CMOS transistors is disclosed in present invention. In a bridge full-wave rectifier comprising four MOS transistors, extra transistors are connected in series between the transistors which endure high voltage and the input to decrease the voltage imposed on the gate of them; moreover, the present invention provides a way to divide voltage imposed between the gate and the source of the said transistors by connecting in series with extra transistors, so it is achieved to implement a high-voltage-resistant rectifier with standard low voltage CMOS transistors without additional process complexity, and decreases manufacture and process costs.
Public/Granted literature
- US20100073979A1 High-voltage-resistant rectifier with standard CMOS transistors Public/Granted day:2010-03-25
Information query
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